kta1266 -0.15a , -50v pnp plastic encapsulated transistor elektronische bauelemente 18-dec-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free feature excellent h fe linearity low noise complementary to ktc3198 classification of h fe (1) product-rank kta1266-o kta1266-y KTA1266-GR range 70~140 120~240 200~400 absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -50 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -5 v collector current - continuous i c -150 ma collector power dissipation p c 625 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -50 - - v i c = -100 a, i e =0 collector to emitter breakdown voltage v (br)ceo -50 - - v i c = -1ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -100 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -50v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -5v, i c =0 dc current gain h fe (1) 70 - 400 v ce = -6v, i c = -2ma h fe (2) 25 - - v ce = -6v, i c = -150ma collector to emitter saturation voltage v ce(sat) - - -0.3 v i c = -100ma, i b = -10ma base to emitter saturation voltage v be(sat) - - -1.1 v i c = -100ma, i b = -10ma transition frequency f t 80 - - mhz v ce = -10v, i c = -1ma collector output capacitance c ob - - 7 pf v ce = -10v, i e =0, f=1mhz noise figure nf - - 10 db v ce = -6v, i c = -0.1ma, f=1khz, rg=10k to-92 ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76 1 11 1 emitter 2 22 2 collector 3 33 3 base
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